STB36NM60N mosfet equivalent, power mosfet.
Type STB36NM60N
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VDSS @ TJmax 600V
RDS(on) max <0.105Ω
ID 32A
PW 250W
100% avalanche tested Low input capacitance and gate charge Low gate input res.
– Automotive Figure 1. Internal schematic diagram
Description
This series of devices is designed using .
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. .
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